High-performance variable gain amplifier employing laminate transmission line structures
US10950542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Apr 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment is an apparatus comprising a semiconductor integrated circuit (“IC”) chip comprising at least one active component for implementing an amplifier circuit; and a laminate structure comprising a plurality of metal layers, the laminate structure further comprising a plurality of passive components and transmission line-based structures. The semiconductor IC chip is integrated with the laminate structure such that a top layer of the laminate structure comprises a shield over a top of the semiconductor IC chip and the passive components for limiting electromagnetic coupling of signals generated by the amplifier circuit beyond the laminate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.