Impedance-matched through-wafer transition using integrated heat-spreader technology
US10950562B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Sep 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6683
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave electronic component comprising a substrate having top and bottom substrate surfaces; the substrate comprising an aperture between the top and bottom substrate surfaces; a metallic heat sink filling the aperture; a microwave integrated circuit having a top circuit surface with at least one microwave signal port and a bottom circuit surface in contact with the metallic heat sink; a signal line comprising at least a metallic via between the top and bottom substrate surfaces, and a top signal conductor arranged between the microwave signal port and the metallic via; wherein the dimensions and location of the metallic via are chosen such that the metallic via forms, together with the metallic heat sink, a first impedance-matched non-coaxial transmission line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.