Image sensor
US10950640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Aug 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.