Heterostructure and light-emitting device employing the same
US10950750B2 · kind B2 · utility
2Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.