Flip chip type light emitting diode chip
US10950757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Aug 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.