Patent · US Active

Method of manufacturing piezoelectric thin film and piezoelectric sensor manufactured using piezoelectric thin film

US10950781B2 · kind B2 · utility

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1References
9Claims
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Assignee

Inventors

Key dates

Filing dateAug 1, 2019
Grant dateMar 16, 2021
Priority date
Expiry dateAug 1, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/87

Abstract

Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.