Methods for producing metal carbide materials
US10954167B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Feb 11, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2975
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Methods of producing silicon carbide, and other metal carbide materials. The method comprises reacting a carbon material (e.g., fibers, or nanoparticles, such as powder, platelet, foam, nanofiber, nanorod, nanotube, whisker, graphene (e.g., graphite), fullerene, or hydrocarbon) and a metal or metal oxide source material (e.g., in gaseous form) in a reaction chamber at an elevated temperature ranging up to approximately 2400° C. or more, depending on the particular metal or metal oxide, and the desired metal carbide being produced. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×102 Pascal, and overall pressure is maintained at approximately 1 atm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.