Patent · US Active

Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

US10954439B2 · kind B2 · utility

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Key dates

Filing dateMay 9, 2019
Grant dateMar 23, 2021
Priority date
Expiry dateMay 9, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0361
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200° C. to 370° C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.