High throughput vacuum deposition sources and system
US10954598B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2018 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | May 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.