N-implant electrical shield for piezo-resistor sensor
US10955304B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jun 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A piezo-resistor-based sensor, and a method to fabricate such sensor, comprise a sensor having at least a sensing element provided on a flexible structure, such as a membrane or cantilever or the like. The sensing element includes at least one piezo-resistor comprising at least a first region of the flexible structure doped with dopant atoms of a first type. The flexible structure furthermore comprises a second doped region within it, at least partially overlapping the first doped region, forming a shield for shielding the sensing element from external electrical field interference, wherein dopant atoms of the second doped region are of a second type opposite to the dopant atoms of the first doped region, for generating a charge depletion layer within the flexible structure at the overlapping region between the first doped region and the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.