Patent · US Active

Manufacturing method

US10957674B2 · kind B2 · utility

0Cited by

36References

11Claims

0Family size

Assignee

Genesis Photonics Inc. · TW

Inventors

Cheng-Wei Hung · Tainan, TW
Jui-Fu Chang · Tainan, TW
Chin-Hua Hung · Tainan, TW
Yu-Feng Lin · Tainan, TW

Key dates

Filing date	Dec 2, 2019
Grant date	Mar 23, 2021
Priority date	—
Expiry date	Dec 2, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/857
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method is provided. The manufacturing method includes the following steps. Firstly, a substrate and a light-emitting component are provided, wherein the light-emitting component is disposed on the substrate. Then, a wavelength conversion layer is provided, wherein the wavelength conversion layer includes a high-density phosphor layer and a low-density phosphor layer. Then, the high-density phosphor layer is adhered to the light-emitting component by an adhesive. Then, a reflective layer is formed above the substrate, wherein the reflective layer covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.