Patent · US Active

Multi-trench semiconductor device and method of manufacture thereof

US10957685B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Steffen Holland · Hamburg, DE
Zhihao Pan · Hamburg, DE
Jochen Wynants · Hamburg, DE
Hans-Martin Ritter · Nahe, DE
Tobias Sprogies · Hamburg, DE
Thomas Igel-Holtzendorff · Nijmegen, NL
Wolfgang Schnitt · Hamburg, DE
Joachim Utzig · Nijmegen, NL

Key dates

Filing date	Oct 18, 2018
Grant date	Mar 23, 2021
Priority date	—
Expiry date	Oct 18, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.