Patent · US Active

Transistor device with a field electrode that includes two layers

US10957771B2 · kind B2 · utility

1Cited by
8References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 12, 2020
Grant dateMar 23, 2021
Priority date—
Expiry dateMay 12, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/605
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed is a transistor device which includes a semiconductor body having a first surface, a source region, a drift region, a body region being arranged between the source region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes a first layer and a second layer. The second layer includes a different conductive material as the first layer. A portion of the second layer is disposed above and directly contacts a portion of the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.