Method for flexible radio-frequency devices
US10957789B1 · kind B1 · utility
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18References
10Claims
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Key dates
| Filing date | May 14, 2020 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | May 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Alx,Iny)Ga1-x-y N-materials in flexible, strainable and wearable radio frequency devices. These devices include (Alx,Iny)Ga1-x-y N-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.