Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

US10957811B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Jianlu Wang · Shanghai, CN
• Xudong Wang · Kirkland, US
• Hong Shen · Omaha, US
• Tie Lin · Shanghai, CN
• Xiangjian Meng · Shanghai, CN
• Junhao Chu · Shanghai, CN

Key dates

• Filing date: Oct 21, 2019
• Grant date: Mar 23, 2021
• Expiry date: Oct 21, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/701

Abstract

An ultra-broad spectrum detector integrated with functions of a two-dimensional semiconductor and a ferroelectric material, where the device includes a substrate, a two-dimensional semiconductor, a source electrode, a drain electrode, a ferroelectric material and a gate electrode; the two-dimensional semiconductor, the source electrode and the drain electrode are arranged on an upper surface of the substrate, and the source electrode and the drain electrode are respectively arranged at two ends of an upper surface of the two-dimensional semiconductor; two sides of the two-dimensional semiconductor are respectively connected with the lower-layer metal of the source electrode and the lower-layer metal of the drain electrode; the ferroelectric material is arranged on the upper surfaces of the two-dimensional semiconductor, the source electrode and the drain electrode; and the lower surface of the gate electrode is connected with the upper surface of the ferroelectric material.