High performance light emitting diode and monolithic multi-color pixel
US10957818B2 · kind B2 · utility
7Cited by
0References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Dec 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus including a red LED and monolithic multicolor LED pixel and a method of fabricating an LED device is disclosed. The method includes providing a substrate for the wafer. The method also includes forming a light emitting diode (LED) using Hydrazine to dispose above the substrate an Indium Gallium Nitride (InGaN) layer of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.