Electron injection based vertical light emitting transistors and methods of making
US10957868B2 · kind B2 · utility
3Cited by
22References
25Claims
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Key dates
| Filing date | Dec 1, 2016 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Dec 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80521
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Gated organic light-emitting diodes or vertical light emitting transistors are disclosed based on the modulation of charge carrier injection from electrodes into light-emitting materials by applying external gate potential. This gate modulation were achieved in two disclosed methods: 1) a porous electrode allowing mobile ions to stabilize electrochemically doped semiconducting materials that can form ohmic contact with electrodes: 2) an electrode with gate-tunable work function such as Al:LiF composite electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.