Patent · US Active

Magnetoresistive effect device

US10957962B2 · kind B2 · utility

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0References
23Claims
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Assignee

Inventors

Key dates

Filing dateOct 23, 2017
Grant dateMar 23, 2021
Priority date
Expiry dateNov 2, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/10
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.