Wafer level integrated MEMS device enabled by silicon pillar and smart cap
US10961118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/037
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.