Plasma etch-resistant film and a method for its fabrication
US10961620B2 · kind B2 · utility
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1References
25Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 3, 2017 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Dec 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.