Process for pulsed thin film deposition
US10961624B2 · kind B2 · utility
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8References
27Claims
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Key dates
| Filing date | Jan 9, 2020 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Jan 9, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film deposition process is provided. The process includes, in a single cycle, providing a precursor in the vapor phase with or without a carrier gas to a reaction zone containing a substrate, such that a monolayer of the precursor is adsorbed to a surface of the substrate and the adsorbed monolayer subsequently undergoes conversion to a discrete atomic or molecular layer of a thin film, without any intervening pulse of or exposure to other chemical species or co-reactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.