Plasma processing apparatus having injection ports at both sides of the ground electrode for batch processing of substrates
US10961626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Feb 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.