Sensors based on negative capacitance field effect transistors
US10962497B2 · kind B2 · utility
1Cited by
7References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Sep 15, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2273
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.