Method of manufacturing photomasks and method of manufacturing semiconductor devices
US10963614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2020 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Apr 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of manufacturing a photomask, a layout of a circuit mask pattern in a mask region corresponding to a chip region of a substrate is designed. A layout of a monitoring mask pattern representing a critical dimension (CD) of the circuit mask pattern in the mask region is designed. The monitoring mask pattern includes a mask-critical dimension uniformity (CDU) detection pattern configured to detect CDU in mask and a wafer-CDU detection pattern configured to detect CDU in wafer. A first optical proximity correction (OPC) is performed on the mask-CDU detection pattern. A second optical proximity correction is performed on the wafer-CDU detection pattern. A photomask having the circuit mask pattern and the monitoring mask pattern is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.