Method of forming a semiconductor device comprising top conductive pads
US10964653B2 · kind B2 · utility
2Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/059
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.