Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer
US10964694B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Feb 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-transistor device includes first and second lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistors sharing a first p-type reduced surface field (RESURF) layer and a first drain n+ region. In certain embodiments, the first LDMOS transistor includes a first drift region, the second LDMOS transistor includes a second drift region, and the first and second drift regions are at least partially separated by the first p-type RESURF layer in a thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.