Patent · US Active

Non-contact measurement of a stress in a film on a substrate

US10964730B2 · kind B2 · utility

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11Claims
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Key dates

Filing dateJan 13, 2020
Grant dateMar 30, 2021
Priority date
Expiry dateJan 13, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.