Photoelectric conversion device and imaging device
US10964737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.