Image sensor

US10964740B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Jinyong Choi · Seoul, KR
• Haemin Lim · Seoul, KR
• Joosung Moon · Seoul, KR
• Ingyu Baek · Seoul, KR
• Seunghan Yoo · Seongnam-si, KR
• Minjung Chung · Hwaseong-si, KR

Key dates

• Filing date: May 9, 2019
• Grant date: Mar 30, 2021
• Expiry date: May 9, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8057

Abstract

An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a photoelectric conversion layer in the semiconductor substrate, transistors on the first surface of the semiconductor substrate, a first interlayer insulation layer on the transistors, a first lower pad electrode and a second lower pad electrode spaced apart from the first lower pad electrode on the first interlayer insulation layer, a mold insulation layer on the first and second lower pad electrodes, first and second lower electrodes in the mold insulation layer, a dielectric layer on the first and second lower electrodes, an upper electrode on the dielectric layer, and an upper pad electrode connected to the upper electrode and including a different conductive material from the first and second lower pad electrodes. The first lower electrodes are on the first lower pad electrode, and the second lower electrodes are on the second lower pad electrode.