Patent · US Active

GaN-based threshold switching device and memory diode

US10964749B2 · kind B2 · utility

3Cited by

1References

10Claims

0Family size

Assignee

ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventors

Kai Fu · Palo Alto, US
Houqiang Fu · Tempe, US
Yuji Zhao · Chandler, US

Key dates

Filing date	Oct 29, 2019
Grant date	Mar 30, 2021
Priority date	—
Expiry date	Oct 29, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/117
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.