High voltage resistor device
US10964781B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2018 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Nov 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure, in some embodiments, relates to a high voltage resistor device. The device includes a buried well region disposed within a substrate and having a first doping type. A drift region is disposed within the substrate and contacts the buried well region. The drift region has the first doping type. A body region is disposed within the substrate and has a second doping type. The body region laterally contacts the drift region and vertically contacts the buried well region. An isolation structure is over the drift region and a resistor structure is over the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.