Semiconductor device and manufacturing process therefor
US10964809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Mar 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.