InGaN-based resonant cavity enhanced detector chip based on porous DBR

US10964829B2 · kind B2 · utility

Assignee

• INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Lixia Zhao · Hunan, CN
• Lei Liu · Thousand Oaks, US
• Chao Yang · Beijing, CN
• Jing Li · Houston, US
• Kaiyou Wang · 龙王头村, CN

Key dates

• Filing date: Jun 1, 2017
• Grant date: Mar 30, 2021
• Expiry date: Jun 1, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13′), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18) formed on the mesa of the n-type GaN layer (13); a p-type electrode (19) formed on a periphery of an upper surface of the sidewall passivation layer (20); a top dielectric DB…