Method of manufacturing a dielectric device
US10964879B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Mar 9, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.