Circuit based on a III/V semiconductor and a method of operating the same
US10965281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2017 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Sep 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/024
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic circuit provided with a III/V semiconductor domain, and a method of operating such a circuit is presented. In particular, the present application relates to electronic circuit based on a Gallium Nitride (GaN) semiconductor. GaN components must be controlled in a way that ensures proper operation over a wide variation of GaN parameters. There is a circuit comprising a first domain coupled to a second domain, the first domain being based on a III/V semiconductor; wherein the first domain comprises a first component and a second component. The second component being representative of an electrical characteristic of the first component. The second domain contains a sensor adapted to sense an electrical quantity of the second component and an input generator coupled to the sensor. The input generator is adapted to provide at least one input, based on the electrical quantity, to the first domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.