Semiconductor device including interface layer and method of fabricating thereof
US10971402B2 · kind B2 · utility
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10References
20Claims
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Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jun 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a channel region and growing an oxide layer on the channel region. Growing the oxide layer includes introducing a first source gas providing oxygen and introducing a second source gas providing hydrogen. The second source gas being different than the first source gas. The growing the oxide layer is grown by bonding the oxygen to a semiconductor element of the channel region to form the oxide layer and bonding the hydrogen to the semiconductor element of the channel region to form a semiconductor hydride byproduct. A gate dielectric layer and electrode can be formed over the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.