Semiconductor device, manufacturing method for semiconductor device, semiconductor module, and power conversion device
US10971415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Oct 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device using a wide bandgap semiconductor material having a bandgap larger than that of silicon, reliability of the semiconductor device is improved by achieving a structure in which electric field strength in the vicinity of an outer end portion of a semiconductor chip is relaxed. A side surface of the semiconductor chip CHP1a is formed of a region R1 including a first corner, a region R2 including a second corner, and a region R3 interposed between the region R1 and the region R2. At this point, in a case of defining a minimum film thickness of a high electric field-resistant sealing member MR in the region R3 as t1 and defining a maximum film thickness of the high electric field-resistant sealing member MR in the region R1 as t2, a relation of t2≤1.5×t1 is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.