Manufacturing method for a TFT array substrate and TFT array substrate
US10971530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2018 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jan 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A manufacturing method for TFT array substrate and TFT array substrate are disclosed. After depositing an electrode material layer and a metal material layer on the gate insulation layer and the active layer in sequence after the active layer above the gate electrode is formed. A photoresist pattern is formed on the metal material layer. The photoresist pattern includes a first and second photoresist blocks with different thicknesses. The metal material layer and the electrode material layer are etched using the photoresist pattern to form a contact electrode and pixel electrodes connected with two ends of the active layer and the source/drain electrodes on the contact electrode. The process is simple and can effectively reduce the contact resistance between the source/drain and the active layer and improve the quality of the product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.