Variable resistance memory device including symmetrical memory cell arrangements and method of forming the same
US10971548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Mar 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A variable resistance non-volatile memory device can include a semiconductor substrate and a plurality of first conductive lines each extending in a first direction perpendicular to the semiconductor substrate and spaced apart in a second direction on the semiconductor substrate. A second conductive line can extend in the second direction parallel to the semiconductor substrate on a first side of the plurality of first conductive lines and a third conductive line can extend in the second direction parallel to the semiconductor substrate on a second side of the plurality of first conductive lines opposite the first side of the plurality of first conductive lines. A plurality of first non-volatile memory cells can be on the first side of the plurality of first conductive lines and each can be coupled to the second conductive line and to a respective one of the plurality of first conductive lines, where each of the plurality of first non-volatile memory cells can include a switching element, a variable resistance element, and an electrode arranged in a first sequence. A plurality of second non-volatile memory cells can be on the second side of the plurality of first conductive lines a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.