Semiconductor device and manufacturing method thereof
US10971617B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0165
Abstract
Some embodiments of this disclosure provide a semiconductor device. The semiconductor device includes: a substrate; a barrier layer, disposed on the substrate; a first channel layer, disposed on the barrier layer; a first gate conductor, disposed on the first channel layer; and a first doped semiconductor layer, disposed between the first gate conductor and the first channel layer, where a forbidden band width of the barrier layer is greater than a forbidden band width of the first channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.