Patent · US Active

Self-assembly patterning for fabricating thin-film devices

US10971640B2 · kind B2 · utility

0Cited by
19References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 26, 2020
Grant dateApr 6, 2021
Priority date—
Expiry dateMar 26, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.