Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence

US10971653B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Alexander Tonkikh · Wenzenbach, DE
• Peter Stauss · Regensburg, DE

Key dates

• Filing date: Nov 22, 2017
• Grant date: Apr 6, 2021
• Expiry date: Nov 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.