Methods and devices for growing scintillation crystals with short decay time
US10975300B2 · kind B2 · utility
4Cited by
32References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2020 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jun 16, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.