CVD apparatus with multi-zone thickness control
US10975473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.