System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound
US10975498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.