Voltage control magnetic random storage unit, memory and logic device composed thereby
US10978121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2016 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer. The invention generates ferroelectric polarization by applying a voltage to both ends of the ferroelectric layer, thereby generating a non-uniform spin-orbit coupling effect, which can modulate the direction in which the current induces the magnetic switching of the magnetic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.