Integrated circuit devices and methods of fabricating such devices
US10978453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jan 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes: a plurality of channel regions spaced apart from each other in an active region; a plurality of source/drain regions; an insulating structure on the active region, the insulating structure defining a plurality of gate spaces; a first gate stack structure in a first of the gate spaces, the first gate stack structure including a first work function metal-containing layer; and an isolation stack structure in a second of the gate spaces that is adjacent the first of the gate spaces, the isolation stack structure having a different stack structure from the first gate stack structure and being configured to electrically isolate a portion of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.