Semiconductor structure, semiconductor assembly and power semiconductor device
US10978584B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 17, 2016 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jan 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different. The semiconductor structure in the present invention significantly optimizes the distribution of an electric field during the off-state high voltage operation of a device, greatly improves the breakdown voltage of the device, avoids the premature breakdown of the device caused by the concentration effect of the electric field at the edge of the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.