Thin-film transistor-based pressure sensor and method of manufacturing same
US10978595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Mar 26, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.