Avalanche diode and method of manufacturing an avalanche diode
US10978606B2 · kind B2 · utility
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0References
18Claims
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Assignee
Inventor
Key dates
| Filing date | Oct 11, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Oct 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The present disclosure relates to an avalanche diode including at least one PN junction; at least one depletion structure located adjacent to the PN junction and configured to form a depletion region; and at least two electrodes to polarize the at least one PN junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.